Weitere Produktangebote C3M0280090D nach Preis ab 6.12 EUR bis 9.54 EUR
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C3M0280090D | Wolfspeed, Inc. |
 Description: SICFET N-CH 900V 11.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V |
auf Bestellung 8306 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0280090D | Wolfspeed |
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 34 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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C3M0280090D | Wolfspeed |
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 34 Stücke Im Einkaufswagen Stück im Wert von UAH |
| C3M0280090D |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
Description: SICFET N-CH 900V 11.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
auf Bestellung 8306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.54 EUR |
| 30+ | 6.12 EUR |
| C3M0280090D |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| C3M0280090D |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 900V 10.2A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)