C3M0350120J-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
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Technische Details C3M0350120J-TR Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 40.8W (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote C3M0350120J-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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C3M0350120J-TR | Wolfspeed, Inc. |
Description: SIC, MOSFET, 350M,1200V, TO-263- Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 40.8W (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
C3M0350120J-TR | Wolfspeed |
MOSFET Gen 3 1200V 350 mO SiC MOSFET, Tape and Reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| C3M0350120J-TR | Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Power dissipation: 40.8W Polarisation: unipolar Gate charge: 13nC Drain current: 7.2A Drain-source voltage: 1.2kV Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| C3M0350120J-TR |
|
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 350M,1200V, TO-263-
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC, MOSFET, 350M,1200V, TO-263-
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| C3M0350120J-TR |
|
Hersteller: Wolfspeed
MOSFET Gen 3 1200V 350 mO SiC MOSFET, Tape and Reel
MOSFET Gen 3 1200V 350 mO SiC MOSFET, Tape and Reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| C3M0350120J-TR |
|
Hersteller: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 7.2A; 40.8W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Power dissipation: 40.8W
Polarisation: unipolar
Gate charge: 13nC
Drain current: 7.2A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH