C3M0900170D Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.97 EUR |
| 10+ | 6.62 EUR |
| 120+ | 5.21 EUR |
| 510+ | 4.38 EUR |
| 2520+ | 4 EUR |
| 5010+ | 3.8 EUR |
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Technische Details C3M0900170D Wolfspeed
Description: SICFET N-CH 1700V 4.4A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 550µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V.
Weitere Produktangebote C3M0900170D nach Preis ab 5.14 EUR bis 10.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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C3M0900170D | Wolfspeed, Inc. |
 Description: SICFET N-CH 1700V 4.4A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 550µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0900170D |
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Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1700V 4.4A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V
Description: SICFET N-CH 1700V 4.4A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1200 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.97 EUR |
| 30+ | 6.2 EUR |
| 60+ | 5.63 EUR |
| 120+ | 5.14 EUR |