| Anzahl | Preis |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 6.25 EUR |
| 30+ | 4.42 EUR |
| 120+ | 3.66 EUR |
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Technische Details C3M0900170M Wolfspeed
Description: SIC, MOSFET, 900M, 1700V, TO-247, Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +20V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-3PF-3L, Vgs(th) (Max) @ Id: 4.2V @ 550µA, Power Dissipation (Max): 33W (Tc).
Weitere Produktangebote C3M0900170M nach Preis ab 5.36 EUR bis 9.45 EUR
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C3M0900170M | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 900M, 1700V, TO-247Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +20V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-3PF-3L Vgs(th) (Max) @ Id: 4.2V @ 550µA Power Dissipation (Max): 33W (Tc) |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0900170M |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-3PF-3L
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Power Dissipation (Max): 33W (Tc)
Description: SIC, MOSFET, 900M, 1700V, TO-247
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-3PF-3L
Vgs(th) (Max) @ Id: 4.2V @ 550µA
Power Dissipation (Max): 33W (Tc)
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.45 EUR |
| 30+ | 5.36 EUR |