C4D02120E-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details C4D02120E-TR Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 167pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote C4D02120E-TR nach Preis ab 1.45 EUR bis 4.52 EUR
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C4D02120E-TR | Wolfspeed |
SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 2A |
auf Bestellung 4971 Stücke: Lieferzeit 101-105 Tag (e) |
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C4D02120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 10A TO2522 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 167pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 15393 Stücke: Lieferzeit 10-14 Tag (e) |
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| C4D02120E-TR |
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Hersteller: Wolfspeed
SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 2A
SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 2A
auf Bestellung 4971 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.57 EUR |
| 2500+ | 1.49 EUR |
| 5000+ | 1.45 EUR |
| C4D02120E-TR |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1200V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 15393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.58 EUR |