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Technische Details C4D10120E Wolfspeed
Description: DIODE SIL CARB 1200V 33A TO2522, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 754pF @ 0V, 1MHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.
Weitere Produktangebote C4D10120E nach Preis ab 6.38 EUR bis 15.29 EUR
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C4D10120E | Wolfspeed |
 Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D10120E | Wolfspeed(CREE) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 170W Manufacturer series: C4D |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D10120E | Wolfspeed |
Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube |
auf Bestellung 2111 Stücke: Lieferzeit 14-21 Tag (e) |
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C4D10120E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 33A TO2522 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 754pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
auf Bestellung 2273 Stücke: Lieferzeit 10-14 Tag (e) |
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| C4D10120E |
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Hersteller: Wolfspeed
Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 75+ | 7.4 EUR |
| C4D10120E |
|
Hersteller: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 170W
Manufacturer series: C4D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 170W; C4D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 170W
Manufacturer series: C4D
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.21 EUR |
| 25+ | 7.11 EUR |
| C4D10120E |
|
Hersteller: Wolfspeed
Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
auf Bestellung 2111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2111+ | 13.47 EUR |
| C4D10120E |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.29 EUR |
| 75+ | 8.03 EUR |
| 150+ | 7.43 EUR |
| 525+ | 6.59 EUR |
| 1050+ | 6.38 EUR |