Technische Details C4D20120H Wolfspeed
Description: DIODE SIL CARB 1200V 54A TO2472, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 54A, Capacitance @ Vr, F: 1500pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C.
Weitere Produktangebote C4D20120H nach Preis ab 13.88 EUR bis 26.01 EUR
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C4D20120H | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 1200V 54A TO2472Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 54A Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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| C4D20120H |
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Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54A TO2472
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE SIL CARB 1200V 54A TO2472
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.01 EUR |
| 30+ | 16.06 EUR |
| 120+ | 13.88 EUR |