| Anzahl | Privatkunde |
|---|---|
| 13+ | 13.74 EUR |
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Technische Details C4D20120H Wolfspeed
Description: DIODE SIL CARB 1200V 54A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1500pF @ 0V, 1MHz, Current - Average Rectified (Io): 54A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote C4D20120H nach Preis ab 17.36 EUR bis 32.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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C4D20120H | Wolfspeed |
 SiC Schottky Diodes 20A 1200V SiC Schottky Diode |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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C4D20120H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1200V 54A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C4D20120H |
|
Hersteller: Wolfspeed
SiC Schottky Diodes 20A 1200V SiC Schottky Diode
SiC Schottky Diodes 20A 1200V SiC Schottky Diode
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.92 EUR |
| 10+ | 19.73 EUR |
| 120+ | 18.05 EUR |
| C4D20120H |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.52 EUR |
| 30+ | 20.09 EUR |
| 120+ | 17.36 EUR |