C4D40120H Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 44.18 EUR |
| 10+ | 28.6 EUR |
| 120+ | 27.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C4D40120H Wolfspeed
Description: DIODE SIL CARB 1200V 128A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2809pF @ 0V, 1MHz, Current - Average Rectified (Io): 128A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A, Current - Reverse Leakage @ Vr: 300 µA @ 1200 V, Reverse Recovery Time (trr): 0 ns.
Weitere Produktangebote C4D40120H nach Preis ab 29.42 EUR bis 45.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
C4D40120H | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 1200V 128A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2809pF @ 0V, 1MHz Current - Average Rectified (Io): 128A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V Reverse Recovery Time (trr): 0 ns |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C4D40120H |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 128A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
Description: DIODE SIL CARB 1200V 128A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.48 EUR |
| 30+ | 29.42 EUR |