| Anzahl | Preis |
|---|---|
| 1+ | 3.22 EUR |
| 10+ | 2.87 EUR |
| 75+ | 2.11 EUR |
| 525+ | 1.95 EUR |
| 1050+ | 1.57 EUR |
| 5025+ | 1.49 EUR |
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Technische Details C6D04065E Wolfspeed
Description: DIODE SIL CARB 650V 16A TO252-2, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 256pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote C6D04065E nach Preis ab 1.4 EUR bis 4.56 EUR
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C6D04065E | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 650V 16A TO252-2Current - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 256pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 3324 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C6D04065E |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: DIODE SIL CARB 650V 16A TO252-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.56 EUR |
| 75+ | 1.98 EUR |
| 150+ | 1.85 EUR |
| 525+ | 1.62 EUR |
| 1050+ | 1.46 EUR |
| 2025+ | 1.4 EUR |