Produktrezensionen
Produktbewertung abgeben
Technische Details C6D08065E Wolfspeed
Description: DIODE SIL CARB 650V 29A TO252-2, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 518pF @ 0V, 1MHz, Current - Average Rectified (Io): 29A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote C6D08065E nach Preis ab 2.96 EUR bis 9.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
C6D08065E | Wolfspeed |
 Diode Schottky SiC 650V 29A 3-Pin(2+Tab) TO-252 Tube |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
C6D08065E | Wolfspeed |
SiC Schottky Diodes 650V 8A Gen6 |
auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
C6D08065E | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 29A TO252-2 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 518pF @ 0V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 4292 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C6D08065E |
|
Hersteller: Wolfspeed
Diode Schottky SiC 650V 29A 3-Pin(2+Tab) TO-252 Tube
Diode Schottky SiC 650V 29A 3-Pin(2+Tab) TO-252 Tube
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3600+ | 2.96 EUR |
| C6D08065E |
|
Hersteller: Wolfspeed
SiC Schottky Diodes 650V 8A Gen6
SiC Schottky Diodes 650V 8A Gen6
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.23 EUR |
| 10+ | 5.68 EUR |
| 75+ | 3.8 EUR |
| 525+ | 3.28 EUR |
| 1050+ | 3.01 EUR |
| C6D08065E |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.09 EUR |
| 75+ | 4.26 EUR |
| 150+ | 4.03 EUR |
| 525+ | 3.49 EUR |
| 1050+ | 3.25 EUR |
| 2025+ | 3.22 EUR |