C6D10065E-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.73 EUR |
| 10+ | 5.82 EUR |
| 100+ | 4.16 EUR |
| 500+ | 3.46 EUR |
| 1000+ | 3.27 EUR |
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Technische Details C6D10065E-TR Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 611pF @ 0V, 1MHz, Current - Average Rectified (Io): 35A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote C6D10065E-TR nach Preis ab 3.7 EUR bis 8.76 EUR
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C6D10065E-TR | Hersteller : Wolfspeed |
SiC Schottky Diodes SiC, Schottky Diode, 10A, 650V, TO-252-2 T&R, Industrial |
auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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| C6D10065E-TR | Hersteller : Wolfspeed |
C6D10065E-TR |
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C6D10065E-TR | Hersteller : Wolfspeed |
Diode Schottky SiC 650V 35A 3-Pin(2+Tab) TO-252 T/R |
Produkt ist nicht verfügbar |
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C6D10065E-TR | Hersteller : Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 10A, 650V, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
Produkt ist nicht verfügbar |