C6D10065Q-TR Wolfspeed
auf Bestellung 4436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.5 EUR |
| 10+ | 5.95 EUR |
| 100+ | 4.26 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.68 EUR |
| 2500+ | 3.48 EUR |
Produktrezensionen
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Technische Details C6D10065Q-TR Wolfspeed
Description: DIODE SIL CARBIDE 650V 39A 4QFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVQFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 611pF @ 0V, 1MHz, Current - Average Rectified (Io): 39A, Supplier Device Package: 4-QFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote C6D10065Q-TR nach Preis ab 3.27 EUR bis 8.73 EUR
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C6D10065Q-TR | Hersteller : Wolfspeed, Inc. |
 Description: DIODE SIL CARBIDE 650V 39A 4QFNPackaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 1633 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D10065Q-TR | Hersteller : Wolfspeed |
Rectifier Diode Schottky SiC 650V 39A |
Produkt ist nicht verfügbar |
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C6D10065Q-TR | Hersteller : Wolfspeed |
650 V Silicon Carbide Schottky Barrier diode in low profile QFN package |
Produkt ist nicht verfügbar |
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C6D10065Q-TR | Hersteller : Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 39A 4QFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
Produkt ist nicht verfügbar |