C6D10065Q-TR Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.6 EUR |
| 10+ | 6.41 EUR |
| 100+ | 4.58 EUR |
| 500+ | 4.01 EUR |
| 2500+ | 3.33 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details C6D10065Q-TR Wolfspeed
Description: DIODE SIL CARBIDE 650V 39A 4QFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVQFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 611pF @ 0V, 1MHz, Current - Average Rectified (Io): 39A, Supplier Device Package: 4-QFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote C6D10065Q-TR nach Preis ab 4.39 EUR bis 10.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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C6D10065Q-TR | Wolfspeed, Inc. |
 Description: DIODE SIL CARBIDE 650V 39A 4QFNPackaging: Cut Tape (CT) Package / Case: 4-PowerVQFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 611pF @ 0V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: 4-QFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 1839 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C6D10065Q-TR |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.34 EUR |
| 10+ | 6.89 EUR |
| 50+ | 5.4 EUR |
| 100+ | 4.93 EUR |
| 500+ | 4.39 EUR |