C6D50065H Wolfspeed
Hersteller: Wolfspeed
SiC Schottky Diodes SiC, Schottky Diode, 50A, 650V, TO-247-2, Industrial, Gen 6
| Anzahl | Preis |
|---|---|
| 1+ | 30.04 EUR |
| 10+ | 28.71 EUR |
| 30+ | 19.38 EUR |
| 120+ | 17.93 EUR |
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Technische Details C6D50065H Wolfspeed
Description: DIODE SIL CARB 650V 136A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2819pF @ 0V, 1MHz, Current - Average Rectified (Io): 136A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote C6D50065H nach Preis ab 17.11 EUR bis 30.75 EUR
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C6D50065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 1353 Stücke: Lieferzeit 10-14 Tag (e) |
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| C6D50065H |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.75 EUR |
| 30+ | 19.23 EUR |
| 120+ | 17.11 EUR |