CAB006M12GM3T Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
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Technische Details CAB006M12GM3T Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V, Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 3.6V @ 69mA, Supplier Device Package: Module.
Weitere Produktangebote CAB006M12GM3T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
CAB006M12GM3T | Wolfspeed |
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CAB006M12GM3T |
|
Hersteller: Wolfspeed
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH