CAB008M12GM3T Wolfspeed
Hersteller: Wolfspeed
Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
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Technische Details CAB008M12GM3T Wolfspeed
Description: MOSFET 2N-CH 1200V 146A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 3.6V @ 46mA, Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 146A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.
Weitere Produktangebote CAB008M12GM3T nach Preis ab 224.79 EUR bis 422.98 EUR
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CAB008M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 146A MODULE Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Current - Continuous Drain (Id) @ 25°C: 146A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB008M12GM3T | MACOM |
Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAB008M12GM3T |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 260.81 EUR |
| 18+ | 224.79 EUR |
| CAB008M12GM3T |
|
Hersteller: MACOM
Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 422.98 EUR |
| 10+ | 396.16 EUR |
| 18+ | 383.42 EUR |