Technische Details CAB425M12XM3 Wolfspeed
Description: MOSFET 2N-CH 1200V 450A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 450A, Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 115mA, Part Status: Active.
Weitere Produktangebote CAB425M12XM3 nach Preis ab 1126.79 EUR bis 1264.52 EUR
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CAB425M12XM3 | Wolfspeed, Inc. |
 Description: MOSFET 2N-CH 1200V 450APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 115mA Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB425M12XM3 | MACOM |
Discrete Semiconductor Modules 1.2kV 425A SiC HalfBridge Module |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAB425M12XM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1126.79 EUR |
| CAB425M12XM3 |
|
Hersteller: MACOM
Discrete Semiconductor Modules 1.2kV 425A SiC HalfBridge Module
Discrete Semiconductor Modules 1.2kV 425A SiC HalfBridge Module
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1264.52 EUR |
| 10+ | 1261.81 EUR |