CAS300M12BM2 Wolfspeed
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1229.41 EUR |
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Technische Details CAS300M12BM2 Wolfspeed
Description: MOSFET 2N-CH 1200V 423A MODULE, Packaging: Bulk, Package / Case: Module, Screw Terminals, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1660W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 423A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V, Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V, Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ), Supplier Device Package: Module, Part Status: Not For New Designs.
Weitere Produktangebote CAS300M12BM2 nach Preis ab 1290.36 EUR bis 2456.16 EUR
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CAS300M12BM2 | Hersteller : Wolfspeed |
 Trans MOSFET N-CH SiC 1.2KV 498A 7-Pin Box |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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CAS300M12BM2 | Hersteller : Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 423A MODULE Packaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS300M12BM2 | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 498A 7-Pin Box |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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CAS300M12BM2 | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 498A 7-Pin Box |
Produkt ist nicht verfügbar |
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CAS300M12BM2 | Hersteller : Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 285A Case: 62MM Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar On-state resistance: 5mΩ Pulsed drain current: 1.5kA Power dissipation: 1.66kW Technology: SiC Gate-source voltage: -5...20V Operating temperature: -40...125°C Mechanical mounting: screw |
Produkt ist nicht verfügbar |