CAS300M12BM2 Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1435.19 EUR |
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Technische Details CAS300M12BM2 Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE, Packaging: Bulk, Package / Case: Module, Screw Terminals, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1660W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 423A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V, Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V, Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ), Supplier Device Package: Module, Part Status: Not For New Designs.
Weitere Produktangebote CAS300M12BM2 nach Preis ab 1455.98 EUR bis 1459.06 EUR
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CAS300M12BM2 | Hersteller : Wolfspeed |
Discrete Semiconductor Modules 1200V, 300A, SiC Half Bridge Module |
auf Bestellung 40 Stücke: Lieferzeit 248-252 Tag (e) |
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CAS300M12BM2 | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 423A 7-Pin Box |
Produkt ist nicht verfügbar |
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CAS300M12BM2 | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 498A 7-Pin Box |
Produkt ist nicht verfügbar |
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CAS300M12BM2 | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 498A 7-Pin Box |
Produkt ist nicht verfügbar |
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CAS300M12BM2 | Hersteller : Wolfspeed(CREE) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 285A; 62MM; screw; Idm: 1.5kA Case: 62MM Operating temperature: -40...125°C Mechanical mounting: screw Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge Polarisation: unipolar Technology: SiC Drain-source voltage: 1.2kV Gate-source voltage: -5...20V Type of semiconductor module: MOSFET transistor Drain current: 285A Pulsed drain current: 1.5kA On-state resistance: 5mΩ Power dissipation: 1.66kW Electrical mounting: screw |
Produkt ist nicht verfügbar |