CBS05F30,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 30V 500MA CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 9981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 10+ | 3.77 EUR |
| 100+ | 3.05 EUR |
| 500+ | 2.71 EUR |
| 1000+ | 2.32 EUR |
| 2000+ | 2.19 EUR |
| 5000+ | 2.16 EUR |
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Technische Details CBS05F30,L3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2B, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, No Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 118pF @ 0V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: CST2B, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Current - Reverse Leakage @ Vr: 50 µA @ 30 V.
Weitere Produktangebote CBS05F30,L3F nach Preis ab 2.29 EUR bis 4.56 EUR
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CBS05F30,L3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Small Sig Schottky Vr=30V Io=0.5A |
auf Bestellung 5748 Stücke: Lieferzeit 10-14 Tag (e) |
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CBS05F30,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA CST2B Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
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