auf Bestellung 8383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.70 EUR |
| 10+ | 0.50 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.20 EUR |
| 1000+ | 0.13 EUR |
| 2500+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
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Technische Details CBS10S40,L3F Toshiba
Description: DIODE SCHOTTKY 40V 1A CST2B, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, No Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 120pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: CST2B, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 40 V.
Weitere Produktangebote CBS10S40,L3F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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CBS10S40,L3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SCHOTTKY 40V 1A CST2BPackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
Produkt ist nicht verfügbar |
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CBS10S40,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CST2B Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
Produkt ist nicht verfügbar |