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CBS10S40,L3F

CBS10S40,L3F Toshiba

CBS10S40_datasheet_en_20181116-1916238.pdf
Hersteller: Toshiba
Schottky Diodes & Rectifiers Sm signal Schottky diode
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Technische Details CBS10S40,L3F Toshiba

Description: DIODE SCHOTTKY 40V 1A CST2B, Capacitance @ Vr, F: 120pF @ 0V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, No Lead, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 150 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Active, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: CST2B, Current - Average Rectified (Io): 1A.

Weitere Produktangebote CBS10S40,L3F

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH