CCB021M12FM3T Wolfspeed
Hersteller: Wolfspeed
MOSFET Modules SiC, Module, 21mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
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Technische Details CCB021M12FM3T Wolfspeed
Description: MOSFET 6N-CH 1200V 51A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 51A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V, Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V, Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 17.7mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote CCB021M12FM3T nach Preis ab 199.75 EUR bis 235.73 EUR
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CCB021M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 6N-CH 1200V 51A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| CCB021M12FM3T |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 6N-CH 1200V 51A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 235.73 EUR |
| 18+ | 199.75 EUR |