CD74HCT03M Harris Corporation
Hersteller: Harris CorporationDescription: IC GATE NAND 4CH 2-INP 14SOIC
Features: Open Drain
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 15280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 611+ | 0.76 EUR |
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Technische Details CD74HCT03M Harris Corporation
Description: IC GATE NAND 4CH 2-INP 14SOIC, Packaging: Tube, Features: Open Drain, Package / Case: 14-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Logic Type: NAND Gate, Operating Temperature: -55°C ~ 125°C, Voltage - Supply: 4.5V ~ 5.5V, Current - Output High, Low: -, 4mA, Number of Inputs: 2, Supplier Device Package: 14-SOIC, Input Logic Level - High: 2V, Input Logic Level - Low: 0.8V, Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF, Part Status: Discontinued at Digi-Key, Number of Circuits: 4, Current - Quiescent (Max): 2 µA.
Weitere Produktangebote CD74HCT03M nach Preis ab 0.42 EUR bis 1.61 EUR
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CD74HCT03M | Hersteller : Texas Instruments |
Description: IC GATE NAND 4CH 2-INP 14SOIC Packaging: Tube Features: Open Drain Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: -, 4mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF Part Status: Discontinued at Digi-Key Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
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Стандартна логіка; Uживл, В = 4,5...5,5; К-сть. л.е./тип л. е. = 4 канали логічного заперечення "І" (NAND) з 2 входами, з відкритим стоком; IOH/ IOL, мА = 4; tз, нс = 24 @ 4,5 В, 50 пФ; Тексп, °С = -55...+125; SOICN-14 |
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