CDBGBSC20650-G Comchip Technology
Hersteller: Comchip Technology
Description: DIODE ARRAY SIC 650V 33A TO-247
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 33A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details CDBGBSC20650-G Comchip Technology
Description: DIODE ARRAY SIC 650V 33A TO-247, Current - Reverse Leakage @ Vr: 100 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 33A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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CDBGBSC20650-G | Hersteller : Comchip Technology |
Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 650V |
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