CDBJFSC3650-G Comchip Technology
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Lieferzeit 14-21 Tag (e)
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Technische Details CDBJFSC3650-G Comchip Technology
Description: DIODE SIL CARBIDE 650V 3A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 190pF @ 0V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-220F, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote CDBJFSC3650-G
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CDBJFSC3650-G | Hersteller : Comchip Technology |
 Diode Schottky SiC 650V 3A 2-Pin(2+Tab) TO-220F Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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CDBJFSC3650-G | Hersteller : Comchip Technology |
Description: DIODE SIL CARBIDE 650V 3A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 0V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
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CDBJFSC3650-G | Hersteller : Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 3A 650V |
Produkt ist nicht verfügbar |