CDBJSC8650-G Comchip Technology
Hersteller: Comchip Technology
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details CDBJSC8650-G Comchip Technology
Description: DIODE SIL CARB 650V 8A TO220-2, Current - Reverse Leakage @ Vr: 100 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 560pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote CDBJSC8650-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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CDBJSC8650-G | Hersteller : Comchip Technology |
SiC Schottky Diodes SiC POWER SCHOTTKY 8A 650V |
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