CDF56G7032N TR13 PBFREE Central Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 10.98 EUR |
| 10+ | 7.41 EUR |
| 100+ | 5.39 EUR |
| 500+ | 5.12 EUR |
| 1000+ | 4.93 EUR |
| 2500+ | 4.35 EUR |
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Technische Details CDF56G7032N TR13 PBFREE Central Semiconductor
Description: SURFACE MOUNT MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V, Power Dissipation (Max): 1.1W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 17.2mA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Weitere Produktangebote CDF56G7032N TR13 PBFREE nach Preis ab 4.72 EUR bis 10.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| CDF56G7032N TR13 PBFREE | Central Semiconductor Corp |
 Description: SURFACE MOUNT MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 1.1W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CDF56G7032N TR13 PBFREE | Central Semiconductor Corp |
Description: SURFACE MOUNT MOSFET Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -6V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Power Dissipation (Max): 1.1W (Ta), 113W (Tc) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CDF56G7032N TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: SURFACE MOUNT MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 4.72 EUR |
| CDF56G7032N TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -6V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Description: SURFACE MOUNT MOSFET
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -6V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.14 EUR |
| 10+ | 8.17 EUR |
| 100+ | 6.61 EUR |
| 500+ | 5.76 EUR |
| 1000+ | 5.47 EUR |