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CDM22011-600LRFP SL

CDM22011-600LRFP SL Central Semiconductor Corp

CDM22011-600LRFP.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 100 V
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.12 EUR
10+ 3.7 EUR
100+ 2.97 EUR
500+ 2.44 EUR
Mindestbestellmenge: 5
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Technische Details CDM22011-600LRFP SL Central Semiconductor Corp

Description: MOSFET N-CH 600V 11A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.05 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 100 V.

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CDM22011-600LRFP SL CDM22011-600LRFP SL Hersteller : Central Semiconductor cdm22011-600lrfp-764998.pdf MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)