CDM2205-800FP SL Central Semiconductor

Description: MOSFET N-CH 800V 5A TO220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP.