CEDM8004VL TR PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor CorpDescription: MOSFET P-CH 30V 450MA SOT883VL
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883VL
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
auf Bestellung 12236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
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Technische Details CEDM8004VL TR PBFREE Central Semiconductor Corp
Description: MOSFET P-CH 30V 450MA SOT883VL, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-883VL, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V.
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CEDM8004VL TR PBFREE | Hersteller : Central Semiconductor |
MOSFET P-Ch Enh Mode FET 30V 8.0VGS 450mA |
auf Bestellung 7861 Stücke: Lieferzeit 10-14 Tag (e) |
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CEDM8004VL TR PBFREE | Hersteller : Central Semiconductor Corp |
Description: MOSFET P-CH 30V 450MA SOT883VL Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883VL Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
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