CES520,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 17pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.032 EUR |
| 16000+ | 0.03 EUR |
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Technische Details CES520,L3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA ESC, Current - Reverse Leakage @ Vr: 5 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: ESC, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 17pF @ 0V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SC-79, SOD-523, Packaging: Tape & Reel (TR).
Weitere Produktangebote CES520,L3F nach Preis ab 0.033 EUR bis 0.26 EUR
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CES520,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA ESC Current - Reverse Leakage @ Vr: 5 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: ESC Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 17pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
auf Bestellung 36572 Stücke: Lieferzeit 10-14 Tag (e) |
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CES520,L3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers SM Sig Schotky Diode 30 VR 0.2A 1 Circuit |
auf Bestellung 2076 Stücke: Lieferzeit 10-14 Tag (e) |
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