CGD65A055SH2 Cambridge GaN Devices
Hersteller: Cambridge GaN DevicesDescription: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.5 EUR |
| 10+ | 13.59 EUR |
| 100+ | 11.79 EUR |
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Technische Details CGD65A055SH2 Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W, Packaging: Tape & Reel (TR), Package / Case: 16-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A, Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V, Vgs(th) (Max) @ Id: 4.2V @ 10mA, Supplier Device Package: 16-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): +20V, -1V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V.
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CGD65A055SH2 | Hersteller : Cambridge GaN Devices |
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W Packaging: Tape & Reel (TR) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V Vgs(th) (Max) @ Id: 4.2V @ 10mA Supplier Device Package: 16-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 12 V |
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