CGD65C025SP2 Cambridge GaN Devices
Hersteller: Cambridge GaN DevicesDescription: 650V GAN HEMT, 25 MOHM, 60A, BHD
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount, Wettable Flank
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Supplier Device Package: BHDFN-9-1
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.7 EUR |
| 10+ | 27.7 EUR |
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Technische Details CGD65C025SP2 Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Wettable Flank, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V, Vgs(th) (Max) @ Id: 4.2V @ 22mA, Supplier Device Package: BHDFN-9-1, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote CGD65C025SP2
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CGD65C025SP2 | Hersteller : Cambridge GaN Devices |
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD Packaging: Tape & Reel (TR) Mounting Type: Surface Mount, Wettable Flank Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4.2V @ 22mA Supplier Device Package: BHDFN-9-1 Drain to Source Voltage (Vdss): 650 V |
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