CGD65C025SP2 Cambridge GaN Devices
Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: BHDFN-9-1
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 60A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount, Wettable Flank
Packaging: Cut Tape (CT)
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Technische Details CGD65C025SP2 Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD, Technology: GaNFET (Gallium Nitride), Mounting Type: Surface Mount, Wettable Flank, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 650 V, Supplier Device Package: BHDFN-9-1, Vgs(th) (Max) @ Id: 4.2V @ 22mA, Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 60A, FET Type: N-Channel.
Weitere Produktangebote CGD65C025SP2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CGD65C025SP2 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 25 MOHM, 60A, BHDTechnology: GaNFET (Gallium Nitride) Mounting Type: Surface Mount, Wettable Flank Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 650 V Supplier Device Package: BHDFN-9-1 Vgs(th) (Max) @ Id: 4.2V @ 22mA Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 60A FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CGD65C025SP2 |
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Hersteller: Cambridge GaN Devices
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: BHDFN-9-1
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 60A
FET Type: N-Channel
Description: 650V GAN HEMT, 25 MOHM, 60A, BHD
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: BHDFN-9-1
Vgs(th) (Max) @ Id: 4.2V @ 22mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 60A
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH

