Technische Details CGHV1F025S MACOM
Description: RF MOSFET HEMT 40V 12DFN, Packaging: Tape & Reel (TR), Package / Case: 12-VFDFN Exposed Pad, Current Rating (Amps): 2A, Mounting Type: Surface Mount, Frequency: 0Hz ~ 15GHz, Power - Output: 29W, Gain: 11.6dBm, Technology: HEMT, Supplier Device Package: 12-PDFN (3x4), Voltage - Rated: 100 V, Voltage - Test: 40 V, Current - Test: 150 mA.
Weitere Produktangebote CGHV1F025S nach Preis ab 169.21 EUR bis 257.97 EUR
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CGHV1F025S | Hersteller : MACOM Technology Solutions |
 Description: RF MOSFET HEMT 40V 12DFNPackaging: Cut Tape (CT) Package / Case: 12-VFDFN Exposed Pad Current Rating (Amps): 2A Mounting Type: Surface Mount Frequency: 0Hz ~ 15GHz Power - Output: 29W Gain: 11.6dBm Technology: HEMT Supplier Device Package: 12-PDFN (3x4) Voltage - Rated: 100 V Voltage - Test: 40 V Current - Test: 150 mA |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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| CGHV1F025S | Hersteller : MACOM |
Trans RF MOSFET N-CH 120V 2A 12-Pin DFN EP |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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| CGHV1F025S | Hersteller : CREE |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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CGHV1F025S | Hersteller : MACOM Technology Solutions |
Description: RF MOSFET HEMT 40V 12DFN Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Current Rating (Amps): 2A Mounting Type: Surface Mount Frequency: 0Hz ~ 15GHz Power - Output: 29W Gain: 11.6dBm Technology: HEMT Supplier Device Package: 12-PDFN (3x4) Voltage - Rated: 100 V Voltage - Test: 40 V Current - Test: 150 mA |
Produkt ist nicht verfügbar |