CIL21J1R8KNE SAMSUNGEM
Hersteller: SAMSUNGEM
Inductor RF Shielded Multi-Layer 1.8uH 10% 10MHz 45Q-Factor Ferrite 0.05A 0.4Ohm DCR 0805 T/R
Inductor RF Shielded Multi-Layer 1.8uH 10% 10MHz 45Q-Factor Ferrite 0.05A 0.4Ohm DCR 0805 T/R
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details CIL21J1R8KNE SAMSUNGEM
Description: FIXED IND 1.8UH 50MA 400MOHM SMD, Tolerance: ±10%, Packaging: Tape & Reel (TR), Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Operating Temperature: -40°C ~ 85°C, DC Resistance (DCR): 400mOhm Max, Q @ Freq: 45 @ 10MHz, Frequency - Self Resonant: 55MHz, Material - Core: Ferrite, Inductance Frequency - Test: 10 MHz, Supplier Device Package: 0805 (2012 Metric), Height - Seated (Max): 0.041" (1.05mm), Inductance: 1.8 µH, Current Rating (Amps): 50 mA.
Weitere Produktangebote CIL21J1R8KNE
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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CIL21J1R8KNE |
auf Bestellung 6680 Stücke: Lieferzeit 21-28 Tag (e) |
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CIL21J1R8KNE | 0805L |
auf Bestellung 13360 Stücke: Lieferzeit 21-28 Tag (e) |
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CIL21J1R8KNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1.8UH 50MA 400MOHM SMD Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -40°C ~ 85°C DC Resistance (DCR): 400mOhm Max Q @ Freq: 45 @ 10MHz Frequency - Self Resonant: 55MHz Material - Core: Ferrite Inductance Frequency - Test: 10 MHz Supplier Device Package: 0805 (2012 Metric) Height - Seated (Max): 0.041" (1.05mm) Inductance: 1.8 µH Current Rating (Amps): 50 mA |
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