Technische Details CM600HA24H MIT
Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; screw, Max. off-state voltage: 1.2kV, Collector current: 600A, Pulsed collector current: 1.2kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Semiconductor structure: single transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote CM600HA24H
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
CM600HA-24H Produktcode: 62482
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Produkt ist nicht verfügbar
|
|||
CM600HA-24H | Hersteller : MITSUBISHI ELECTRIC |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; screw Max. off-state voltage: 1.2kV Collector current: 600A Pulsed collector current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Features of semiconductor devices: integrated anti-parallel diode Semiconductor structure: single transistor Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
CM600HA-24H | Hersteller : Powerex Inc. |
![]() |
Produkt ist nicht verfügbar |
||
CM600HA-24H | Hersteller : MITSUBISHI ELECTRIC |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; screw Max. off-state voltage: 1.2kV Collector current: 600A Pulsed collector current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Features of semiconductor devices: integrated anti-parallel diode Semiconductor structure: single transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |