CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 900V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Description: DIODE GEN PURP 900V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
25+ | 0.7 EUR |
100+ | 0.48 EUR |
500+ | 0.36 EUR |
1000+ | 0.27 EUR |
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Technische Details CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 900V 500MA M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 100 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: -40°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 900 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA, Current - Reverse Leakage @ Vr: 50 µA @ 900 V.
Weitere Produktangebote CMF03(TE12L,Q,M) nach Preis ab 0.29 EUR bis 1.23 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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CMF03(TE12L,Q,M) | Hersteller : Toshiba | Diodes - General Purpose, Power, Switching 900V 1A M-FLAT |
auf Bestellung 2997 Stücke: Lieferzeit 14-28 Tag (e) |
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CMF03(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 900V 500MA M-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 900 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 900 V |
Produkt ist nicht verfügbar |