CMLDM7120G TR PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 1A SOT563
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.57 EUR |
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Technische Details CMLDM7120G TR PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 20V 1A SOT563, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): 8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote CMLDM7120G TR PBFREE
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CMLDM7120G TR PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 20V 1A SOT563 Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CMLDM7120G TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 1A SOT563
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 1A SOT563
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH