CMLDM8120G TR PBFREE Central Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.33 EUR |
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Technische Details CMLDM8120G TR PBFREE Central Semiconductor
Description: MOSFET P-CH 20V 860MA SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V.
Weitere Produktangebote CMLDM8120G TR PBFREE nach Preis ab 0.36 EUR bis 1.32 EUR
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CMLDM8120G TR PBFREE | Central Semiconductor Corp |
 Description: MOSFET P-CH 20V 860MA SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
auf Bestellung 1451 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CMLDM8120G TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
auf Bestellung 1451 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.82 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |