CMPDM203NH TR

CMPDM203NH TR Central Semiconductor


cmpdm203nh-34194.pdf Hersteller: Central Semiconductor
MOSFET SMD Small Signal Mosfet
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Technische Details CMPDM203NH TR Central Semiconductor

Description: MOSFET N-CH 20V 3.2A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V.

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CMPDM203NH TR CMPDM203NH TR Hersteller : Central Semiconductor Corp CMPDM203NH.PDF Description: MOSFET N-CH 20V 3.2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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