
CMS09(TE12L,Q,M) Toshiba Semiconductor and Storage

Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
17+ | 1.07 EUR |
27+ | 0.67 EUR |
100+ | 0.43 EUR |
500+ | 0.32 EUR |
1000+ | 0.29 EUR |
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Technische Details CMS09(TE12L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 70pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Current - Reverse Leakage @ Vr: 500 µA @ 30 V.
Weitere Produktangebote CMS09(TE12L,Q,M)
Foto | Bezeichnung | Hersteller | Beschreibung |
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CMS09(TE12L,Q,M) | Hersteller : Toshiba |
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CMS09(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
Produkt ist nicht verfügbar |
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CMS09(TE12L,Q,M) | Hersteller : Toshiba |
![]() |
Produkt ist nicht verfügbar |