CMS20I30A(TE12L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.90 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.34 EUR |
Produktrezensionen
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Technische Details CMS20I30A(TE12L,QM Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 82pF @ 10V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A, Current - Reverse Leakage @ Vr: 100 µA @ 30 V.
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