CMS25N03V8A-HF Comchip Technology
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.58 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 3000+ | 0.38 EUR |
| 9000+ | 0.33 EUR |
| 24000+ | 0.32 EUR |
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Technische Details CMS25N03V8A-HF Comchip Technology
Description: MOSFET N-CH 30V 25A 8DFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, Power Dissipation (Max): 21W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote CMS25N03V8A-HF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CMS25N03V8A-HF | Comchip Technology |
Description: MOSFET N-CH 30V 25A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 21W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CMS25N03V8A-HF |
Hersteller: Comchip Technology
Description: MOSFET N-CH 30V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 30V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)