auf Bestellung 2996 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 2.96 EUR |
| 22+ | 2.44 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.6 EUR |
| 1000+ | 1.36 EUR |
| 3000+ | 1.16 EUR |
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Technische Details CMS45N10H8-HF Comchip Technology
Description: MOSFET N-CH 100V 45A PPAK, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 94.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: P-PAK (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V.
Weitere Produktangebote CMS45N10H8-HF nach Preis ab 1.87 EUR bis 2.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| CMS45N10H8-HF | Hersteller : Comchip Technology |
Description: MOSFET N-CH 100V 45A PPAK Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 94.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: P-PAK (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V |
auf Bestellung 2996 Stücke: Lieferzeit 21-28 Tag (e) |
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