CMS45N10H8-HF Comchip Technology
| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
| 3000+ | 0.8 EUR |
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Technische Details CMS45N10H8-HF Comchip Technology
Description: MOSFET N-CH 100V 45A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: P-PAK (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 94.7W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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CMS45N10H8-HF | Hersteller : Comchip Technology |
 Description: MOSFET N-CH 100V 45A PPAKInput Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: P-PAK (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 94.7W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
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