CMUDM8005 TR PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 20V 650MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.69 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Produktbewertung abgeben
Technische Details CMUDM8005 TR PBFREE Central Semiconductor Corp
Description: MOSFET P-CH 20V 650MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V.
Weitere Produktangebote CMUDM8005 TR PBFREE nach Preis ab 0.76 EUR bis 1.78 EUR
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CMUDM8005 TR PBFREE | Central Semiconductor Corp |
Description: MOSFET P-CH 20V 650MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V |
auf Bestellung 22556 Stücke: Lieferzeit 10-14 Tag (e) |
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| CMUDM8005 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 20V 650MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
Description: MOSFET P-CH 20V 650MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
auf Bestellung 22556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 14+ | 1.57 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.76 EUR |