CMZ36(TE12L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: M-FLAT (2.4x3.8)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±10%
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.3 EUR |
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Technische Details CMZ36(TE12L,Q,M) Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000, Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 2 W, Supplier Device Package: M-FLAT (2.4x3.8), Impedance (Max) (Zzt): 30 Ohms, Voltage - Zener (Nom) (Vz): 36 V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-128, Tolerance: ±10%, Packaging: Tape & Reel (TR).
Weitere Produktangebote CMZ36(TE12L,Q,M) nach Preis ab 0.36 EUR bis 1.46 EUR
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CMZ36(TE12L,Q,M) | Hersteller : Toshiba |
Zener Diodes Pb-F ZENER DIODE M-FLAT VZ=36V IF=1A |
auf Bestellung 9957 Stücke: Lieferzeit 10-14 Tag (e) |
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CMZ36(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F ZENER DIODE M-FLAT MOQ=3000 Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 2 W Supplier Device Package: M-FLAT (2.4x3.8) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Tolerance: ±10% Packaging: Cut Tape (CT) |
auf Bestellung 9160 Stücke: Lieferzeit 10-14 Tag (e) |
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