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CPH3341-TL-E

CPH3341-TL-E onsemi

2156_CPH3341.pdf
Hersteller: onsemi
Description: MOSFET P-CH 30V 5A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 3-CPH
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Bulk
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Technische Details CPH3341-TL-E onsemi

Description: MOSFET P-CH 30V 5A 3CPH, Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 3-CPH, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Bulk.