CPH3351-TL-W ON Semiconductor

Description: MOSFET P-CH 60V 1.8A 3CPH, Supplier Device Package: 3-CPH, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V.