CPH3355-TL-W ON Semiconductor

Description: MOSFET P-CH 30V 2.5A 3CPH, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 3-CPH, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).