CPH3356-TL-W ON Semiconductor

Description: MOSFET P-CH 20V 2.5A 3CPH, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 3-CPH, Vgs(th) (Max) @ Id: 1.4V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 137mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V.