CPH3413-TL-E onsemi

Description: N-CHANNEL SILICON MOSFET, Packaging: Bulk, Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 3-CPH, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V.