CPH3427-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 1A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 20 V
Description: MOSFET N-CH 100V 1A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2219+ | 0.23 EUR |
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Technische Details CPH3427-TL-E onsemi
Description: MOSFET N-CH 100V 1A 3CPH, Packaging: Bulk, Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 630mOhm @ 500mA, 10V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: 3-CPH, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 20 V.
Weitere Produktangebote CPH3427-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| CPH3427-TL-E | Hersteller : SANYO | SOT23-ZC PB-FREE |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |